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www.irf.com 1 IRF7324D1PBF fetky mosfet / schottky diode 12/06/04 the fetky family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. description v dss = -20v r ds(on) = 0.27 ? schottky vf = 0.39v tm top view 8 1 2 3 4 5 6 7 a a s g d d k k co-packaged hexfet ? power mosfet and schottky diode ideal for mobile phone applications generation v technology so-8 footprint lead-free notes through are on page 8 so-8 absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation dv/dt peak diode recovery v/ns linear derating factor mw/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ??? 62.5 max. -2.2 -1.8 -22 12 -20 -55 to + 150 2.0 16 1.3 -0.74 pd-95309a
IRF7324D1PBF 2 www.irf.com mosfet electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -20 ??? ??? v r ds(on) static drain-to-source on-resistance ??? 0.155 0.270 ? ??? 0.260 0.400 v gs(th) gate threshold voltage -0.70 ??? ??? v i dss drain-to-source leakage current ??? ??? -1.0 a ??? ??? -25 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 2.4 ??? ??? s q g total gate charge ??? 5.2 7.8 q gs gate-to-source charge ??? 0.88 ??? nc q gd gate-to-drain charge ??? 2.5 ??? t d(on) turn-on delay time ??? 10 ??? t r rise time ???12??? t d(off) turn-off delay time ??? 11 ??? ns t f fall time ??? 7.6 ??? c iss input capacitance ??? 260 ??? c oss output capacitance ??? 140 ??? pf c rss reverse transfer capacitance ??? 70 ??? mosfet source-drain ratings and characteristics parameter min. typ. max. units i s continuous source current ??? ??? -2.2 i sm pulsed source current ??? ??? -22 v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 26 39 ns q rr reverse recovery charge ??? 24 36 nc schottky diode maximum ratings parameter max. units i f(av) max. average forward current 1.7 50% duty cycle rectangular wave, t a = 25c 1.2 a t a = 70c i sm max.peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with vrrm applie d schottky diode electrical specifications parameter max. units v fm max. forward voltage drop 0.50 v 0.62 0.39 0.57 i rm max. reverse leakage current 0.05 ma t j = 25c 10 t j = 125c ct max. junction capacitance 92 pf dv/dt max. voltage rate of charge 3600 v/s rated v r v gs = 12v i d = -2.2a t j = 25c, i f = -2.2a, v dd = -10v di/dt = 100a/s t j = 25c, i s = -2.2a, v gs = 0v v gs = -4.5v r g = 6.0 ? v ds = -16v, i d = -2.2a v dd = -16v conditions v gs = 0v, i d = -250a v gs = -4.5v, i d = -1.2a v gs = -12v v gs = -2.7v, i d = -0.6a v ds = v gs , i d = -250a v ds = -16v, v gs = 0v, t j = 125c v ds = -16v, v gs = 0v conditions ? = 1.0mhz v gs = 0v v ds = -15v v dd = -10v, v gs = -4.5v i d = -2.2a conditions r d = 4.5 ? v r = 5vdc (100khz to 1mhz) 25c conditions i f = 1.0a, t j = 25c i f = 2.0a, t j = 25c i f = 1.0a, t j = 125c v r = 20v i f = 2.0a, t j = 125c
IRF7324D1PBF www.irf.com 3 power mosfet characteristics

0.1 1 10 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c -1.5v vgs top -7.5v -5.0v -4.0v -3.5v -3.0v -2.5v -2.0v bottom -1.5v 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -10v 60s pulse width t j = 25c t j = 150c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c -1.5v vgs top -7.5v -5.0v -4.0v -3.5v -3.0v -2.5v -2.0v bottom -1.5v
IRF7324D1PBF 4 www.irf.com power mosfet characteristics fig 8. maximum safe operating area fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage

0.0 0.5 1.0 1.5 2.0 2.5 3.0 -i d , drain current (a) 0.140 0.144 0.148 0.152 0.156 0.160 0.164 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs= - 4.5v v gs= - 5.0v 2.0 4.0 6.0 8.0 10.0 -v gs , gate-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -2.2a t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -2.2a v gs = -4.5v 1 10 100 -v ds , drain-tosource voltage (v) 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRF7324D1PBF www.irf.com 5 power mosfet characteristics ! !

fig 11. maximum effective transient thermal impedance, junction-to-ambient 1 10 100 -v ds , drain-to-source voltage (v) 0 100 200 300 400 500 600 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 024681012 q g total gate charge (nc) 0 2 4 6 8 10 12 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -16v vds= -10v i d = -2.2a 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRF7324D1PBF 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage
fig. 12 -typical forward voltage drop characteristics
0.1 1 10 0.0 0.2 0.4 0.6 0.8 1 .0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j fig.14 - typical junction capacitance vs.reverse voltage forward votage drop - v fm (v)
IRF7324D1PBF www.irf.com 7 rectifier logo international example: t his is an irf 7807d1 (fet ky) xxxx 807d1 y = last digit of the year a = assembly site code ww = we e k lot code product (opt ional) p = disgnates lead - free dat e code (yww) part number e1 d e y b a a1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 b as ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -012aa. not e s : 1. dimens ioning & tolerancing per as me y14.5m-1994. 2. cont r ol ling dime ns ion: mil lime t e r 3. dimens ions are s hown in millimet ers [inches ]. 5 dime ns ion doe s not include mol d pr ot rus ions . 6 dime ns ion doe s not include mol d pr ot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s u b s t r at e . mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.07 0] so-8 (fetky) package outline
so-8 (fetky) part marking information
IRF7324D1PBF 8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 11) i sd -2.2a, di/dt -96a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2% surface mounted on fr-4 board, steady-state r is measured at t j of approximately 90c. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 (fetky) tape and reel

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